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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-3P(H)IS package High voltage;high speed Low collector saturation voltage APPLICATIONS Horizontal deflection output for high resolution display,color TV High speed switching applications PINNING PIN 1 2 3 Base Collector DESCRIPTION 2SC5404 Fig.1 simplified outline (TO-3P(H)IS) and symbol Emitter Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 1500 600 5 Collector-base voltage Open emitter Collector-emitter voltage Open base Emitter-base voltage Open collector Collector current Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature TC=25ae 9 18 4.5 50 150 -55~150 UNIT V V V A A A W ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5404 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector output capacitance Transition frequency CONDITIONS IC=10mA ;IB=0 IC=7A; IB=1.75A IC=7A; IB=1.75A VCB=1500V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=7A ; VCE=5V IE=0 ; VCB=10V,f=1MHz 10 4 115 2.5 MIN 600 3.0 1.5 1.0 10 40 8 pF MHz |I TYP. MAX UNIT V V V mA A SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 Cob fT Switching times ts tf TOR NDU ICO E SEM ANG INCH IE=0.1A ; VCE=10V Storage time 2.5 Fall time ICP=5.5A;IB1(end)=1.1A fH =64kHz 0.15 3.5 0.3 |I |I s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC5404 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions (unindicated tolerance:A 0.20 mm) 3 |
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